MOSFET model STB80PF55

Similar Questions

• MOSFET, modeling of the measures

  Hi all

  I've taken a few steps (for the most part IV tanks and others) on one of my classmates built a transistor and I want to simulate it in Multisim. I panned on just edit the template for the virtual PFET. Could someone please tell me where I can find this as all of these variable stand for?

  + (
  + LEVEL = 1
  + VTO = 0.0
  + KP = 2.0E - 5
  + GAMMA = 0.5
  + PHI = 0.6
  + LAMBDA = 0.001
  + RS = 0.0
  + DR = 0.0
  + CBD = 0.0
  + CBS = 0.0
  + IS = 1.0E - 14
  + PB = 0.8
  + CASE = 0.4e - 9
  + CGDO = 0.4e - 9
  + CGBO = 0.38e - 9
  + RSH = 0.0
  + CJ = 570e-6
  + MJ = 0.5
  + CJSW = 120th-12
  + MJSW = 0.5
  + JS = 10.0E - 9
  + TOX = 9.5e - 9
  + NSS = 0.0
  + GPT = 1.0
  + LD = 80.0e - 9
  + OU = 460,0
  + KF = 0.0
  + AF = 1.0
  + FC = 0.5
  + TNOM = 27
  + )

  You can find here Multisim component reference:

  http://www.NI.com/PDF/manuals/374485a.PDF

  Page 149 is the discussion of the MOSFETs.

  -Pat N

• Import of a SPICE Supetex model - questions

  Hello

  I have a. File MOD of Supertex for one of their MOSFETs. I tried to import the component in to multisum the "component" Wizard of multisim, but I always got the error...

  -Checking SPICE netlist for designs 1 - 4 June 2013, 15:53:44 -
  Error of SPICE Netlist in schematic RefDes 'u2', 'mosmod' element: unsupported type of model 'PMOS.
  Error of SPICE Netlist in schematic RefDes 'u2', 'm1' element: type of device unsupported SPICE "MOS7."
  = SPICE Netlist verification completed, 2 error (s), 0 warning (s) =.

  Why multisim don't care what model? And how can I change to solve the problems?

  The model, which was provided to the East:

  . SUBCKT TN6420 1 2 3
  11 2 3 3 M1
  + MOSMOD
  + L = 3E-06
  + W = 0.058
  + AD = GRADES 9-12
  + PD = 1.2E - 05
  + AS = GRADES 9-12
  + PS = 1.2E - 05
  JMOD JFET 1 3 11 1
  * AREA = 1
  3 1 led 1 Cbody
  * A = 1
  1 11 Rdummy 1E + 06
  . MODEL JMOD NJF
  + = - 10 vto
  + beta = 0.03864
  + is = 1E-15
  + = 3.281 rd
  + lambda = 0
  . Diode MODEL D
  + is = 1E-15
  -n = 1
  + r = 1
  + bv = 250
  + ibv = 0.001
  + tt = 1E-06
  + cjo = 8-11
  + vj = 0.6
  + m = 0.5
  . Model MOSMOD NMOS
  + = level 7
  + version = 3.2
  + paramchk = 1
  + mobmod = 3
  + capmod = 3
  + noimod = 1
  + delta = 0.01
  + tnom = 27
  + tox = 7, 5th-08
  + toxm = 7, 5th-08
  + 7.739E = + 16 nch
  + xj = 5th-06
  + vth0 = 1.1
  + k1 = 0
  + k2 = 0
  + k3 = 11.69
  + k3b =-22.99
  + w0 = 0.0001
  + nlx = 0
  + dvt0 = 2.2
  + dvt1 = 0.53
  + dvt2 = 0.05058
  + dvt0w = 0
  + dvt1w = 5.3E + 06
  + dvt2w =-0.032
  + eta0 = 0
  + features = 1581
  + d Sub = 0.56
  + u0 = 261.1
  + au = 1E-10
  + ub = 1E-20
  + uc = - 1-09
  + = 1.778E + 04 vsat
  + a0 = 0
  + ags = - 1
  + b0 = 0
  + b1 = 0
  + = 0.136 keta
  + a1 = 0
  + a2 = 3.414
  + rdsw = 3.273E + 04
  + prwb = 0.3214
  + GTRP = - 10
  + wr = 1
  + wint = 0
  + wl = 0
  + RFD = 1
  + ww = 0
  + wwn = 1
  + wwl = 0
  + dwg = 0
  + dwb = 0
  + Toys = 0
  + He's = 0
  + lln = 1
  + lw = 0
  + lwn = 1
  + waterline length = 0
  + = 0.0157 voff
  + nfactor = 0.7
  + cit = 0
  + cdsc = 0
  + cdscb = 0
  + cdscd = 0
  + cffp = 0,1
  + pdiblc1 = 0
  + pdiblc2 = 1E-06
  + pdiblcb = 1
  + drout = 0
  + pscbe1 = 3.548E + 08
  + pscbe2 = 1E-09
  + pvag = 1E-06
  + alpha0 = 0
  + alpha1 = 0.04694
  + beta0 = 210,8
  + js = 5-10
  + jsw = 0
  + nj = 1
  + ijth = 0,1
  + cj = 0
  + mj = 0.2387
  + pb = 0.3
  + cjsw = 0
  + mjsw = 0.33
  + pbsw = 0.3
  + cjswg = 0
  + mjswg = 0.33
  + pbswg = 1
  + cgbo = 0
  + cgdo = 0
  + CASE = 0
  + cgsl = 4.5E - 09
  + cgdl = 2.8e - 09
  + Shorty = 0.6
  + cf = 0
  + noff = 1
  + voffcv = 0
  + cela = 1
  + less = 15
  + dlc = 0
  + = dwc - 3.584E - 08
  + llc = 0
  + lwc = 0
  + lwlc = 0
  + wlc = 0
  + CME = 0
  + wwlc = 0
  + clc = 1E-07
  + key = 0.6
  + Elm = 2
  + xpart = 0.6
  + kt1 = - 0.11
  + kt1l = 0
  + = 0.022 kt2
  + ute = - 1.5
  + ua1 = 4.31E - 09
  + ub1 = - 7.61E - 18
  + uc1 = - 5.6E - 11
  + a = 3.3e + 04
  + prt = 0
  + xti = 3
  + tpb = 0
  + tpbsw = 0
  + tpbswg = 0
  + JCT = 0
  + tcjsw = 0
  + tcjswg = 0
  + af = 1.5
  + ef = 1.5
  + kf = 1E-17
  + Ms = 4.1E + 07
  + noia = 2nd + 29
  + noib = 5th + 04
  + site = - 1.4E - 12
  . ENDS

  Thanks for any help in advance

  Rob

  It seems that this subcircuit, written for a specific in mind Simulator, attempts to use the BSIM3.2 mosfet model. We have BSIM3.3 = 8 level. Simply change the value of the parameter level of 8.

  Here is a table of our help documentation:

• Model of MOSFET of IPW60R045CP does not work

  Hello

  I try to simulate the IPW60R045CP Mosfet using the following spice model:

  . SUBCKT IPW60R045CP_L0 source of grid of evacuation

  LG door g1 8n
  LD drain d1 3n
  LS source s1 8n
  S2 s1 RS 1.5 m

  RG g1 g2 1.3
  M1 d2 g2 s2 s2 DMOS of L = at the 1u of of W = 1u
  . MODEL DMOS NMOS (KP = VTO 112.533 = 3.85 THETA = 0 VMAX = 1.5e5 ETA = 0 LEVEL = 3)
  RD d2 d1a 0.034 TC = 13 m
  . MODEL MVDR NMOS (KP = 272,45 = - 1 LAMBDA VTO = 0.15)
  Mr d1 d2a d1a d1a MVDR W = 1 u L = 1u
  D1a, d2a RX 1 m
  Cds1 s2 d2 195.5 p
  DBD s2 d2 Dbt
  . MODEL Dbt D(BV=600 M=0.85 CJO=88.84n VJ=0.5V)
  Cbody s2 21 CBODY
  . MODEL CBODY D (IS = 42.1 p N = RS = 2u EG = TT = 750n 1.12 1.08)
  Rdiode d1 21 1.69 m TC = 6 m

  . MODEL sw NMOS (VTO = KP LEVEL 0 = 10 = 1)
  Headaches g2 c a a sw
  Maux2 b d g2 g2 sw
  Waters c a d2 g2 1
  Eaux2 g2 d d2 g2 - 1
  Cox b d2 5.51n
  . MODEL DGD D (CJO = 5.51n VJ = 0.5 M = 1)
  OPG b d2 1
  DGD a d2 DGD
  Rpar2 d2 has 10Meg
  CGS g2 s2 6.81n

  . ENDS IPW60R045CP_L0

  It does not work (no error message, but no current is flowing).

  Is there a way to make this model work?

  (I use Multisim 11.0)

  Uwe Fechner

  Hello

  I managed at the end.

  I had to modify the graphic symbol of the transistor with the symbol Editor.

  Door and Source were exchanged there.

  Best regards:

  Uwe Fechner

• Modeling of MOSFET and language SPICE

  Hello

  I´d would like to know which of the modeling MOSFT levels are supported in Multisim and if the language of the Spice used is the standard.

  Thank you

  Good day!

  Hi Morara,

  You can find a list of levels/models currently supported in the Multisim User Guide. You want to reference chapter 7 Multisim SPICE > Analog Devices > MOSFET.

  Unfortunately, there is no standard SPICE language. Implementation of Multisim is based on XSPICE with a few additions, however, Multisim takes care of compatibility modes that allows you to use say Multisim a model SPICE was writing for a particular Simulator and use the syntax for this Simulator. We can use models designed for other simulators. As a general rule, if it's an analog model, it is likely to work unmodified in Multisim. If it's a digital model XSPICE wrote, it is likely to work unmodified in Multisim.

• convergence in the mosfet driver NCP5355D circuit, could be "bootstrap" error?

  Hello

  I use the Multisim 13.0.1. There is a driver 8 pin mosfet NCP5355D available in the library. I wanted to use it for switching half-bridge MOSFET transistors, but a simulation error. Report says that "convergent transitional time calculation not '.

  I've included the circuit with the driver door, as well as the circuit with pulsed voltage sources separate for switching MOSFETs, which could provide an overview of what I intend to achieve with the driver door.

  I have also tried to set up the driver door step by step - I started VS, CO, EN, PGND simulation aside mistakes and haven't got pine then; but when I started to connect pins STB and DRN, convergence error has occurred. If the error of convergence is resulting from errors in STB and DRN pins?

  For convenience, the datasheet of NCP5355D is also attached here, where the application example connections are included.

  Waiting for your ideas and thanks in advance!

  I don't have a Multisim, so I can't see your circuits but have a few general comments.

  1 MOSFET driver models often use switches and these can lead to problems of convergence. This is because the action of switching introduced a strong nonlinearity in the model.  I wrote my own template using transmission lines for delay and nonlinear dependent sources with functions tanh rather than hard switches.

  2. If you do not need to model the detailed driver behavior, using pulse sources with up/down times as long as possible without changing the behavior of the MOSFET can be a better choice.

  3. There are books written on how to deal with the problems of convergence of SPICES. That's what I found useful to one of them:

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  AIDS convergence
  * Choose RELTOL appropriate
  * set VNTOL = RELTOL * Vsmall
  * set = RELTOL ABSTOL * Ismall
  * the value = 1/Rp GMIN where Rp is the parasitic resistance that
  will have a minimal effect when added to the circuit.
  * models of semiconductor should have resistance non-zero
  * RS (diode), RC (BJT), RD, RS (FET)
  * Make ITL1 = 500 (limit of iterations DC OP)
  * use. NODESET
  * Use source stepping ITL6 = 500
  * Convergence transitional AIDS
  * Add capacitance of device models:
  * The CJO (diode), ECJ, CJC, SYC (BJT), CDG, CGS (JFET)
  * CGDO, CASE CGBO, CBD, CBS, CJ, CJSW
  * increase ITL4 = 40
  *

  Good luck.

  Lynn

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